Solid State Incandescent Light Emitting Devices

(SSI-LEDs)


Uniqueness of our research:

This is the first one-chip solid state LED that emits high quality white light under the stress of a voltage at room temperature. The light is emitted from a nm-thick amorphous metal oxide thin film stack on a p-type Si wafer. The film is deposited by sputtering. The embedding of a nocrystal layer can enhance the intensity of the emitted light.     

 

Yue Kuo and Chi-Chou Lin, “A Light Emitting Device Made from Thin Zirconium-doped Hafnium Oxide High-k Dielectric Film with or without an Embedded Nanocrystal Layer,” Appl. Phys. Letts., 102(3), 031117 (2013).

This paper was selected as a Research Highlight by APL editors, 2012.  

 

JVST B Januray/February 2014 Cover Page


Device Structure and Fabrication Process 

·       MOS Capacitors with ZrHfO and nc-ZnO embedded ZrHfO gate dielectrics

 

·       Room temperature sputtered high-k thin films on a p-type Si wafer followed by RTA 

Light emission from (a) a cluster of HfOx LEDs, and high magnification photos of

samples of (b) no PDA, (c) 600°C PDA, and (d) 800°C PDA process steps.

Solid-State Electronics 89 120 (2013).

 

Light Emitting at Room Temperature under -Vg Stress

·       Bright light emitted from small dots eventually distributed on electrode

      

(a)                                                     (b)                                               (c)

·       Wide spectrum of light covering visible and near IR wavelengths  

 Mechanism of Light Emitting  

·       Light Emitting from excitation of conductive paths formed after dielectric breakdown

Long Lifetime in air  

·       Conductive paths embedded in dielectric film

WO3 LED > 1,300 hours lifetime

JVST B 32(1) 011208 (2014)

 

 

 


 


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