The main interest of this
laboratory is to study the thin film related microelectronic or opto-electronic
devices. The ultimate goal is to correlate material properties to their process
conditions and to the device characteristics. Materials involved in this laboratory
are Si-based semiconductors (PECVD, a-Si:H,
microcrystalline silicon, n+, and p+), dielectrics
(Si-based, High k gate dielectrics, low k interlayer dielectric,
metal oxides, etc.), and conductors (copper, aluminum,
refractory metals, indium tin oxide ITO, etc.). Processes used for these
studies are deposition (PECVD, sputtering, CVD, etc.),
etching (RIE, wet, etc.), lithography, thermal annealing
(RTP, furnace, plasma, etc.), and doping (plasma, etc.).
Currently, the following five areas are being actively researched in
this laboratory:
1.
RIE of Copper, ITO, and metal oxides,
2.
High k gate dielectrics for sub-100 nm MOS as well as other
microelectronic devices such as TFTs, capacitors, and
diodes,
3.
a-Si:H
and polycrystalline silicon TFT technology,
4.
Thin
film deposition by Sputtering and PECVD, and
5.
Biochips.
Photos of Laboratory and Equipment:
-
PECVD
-
RIE
-
Testers
Videos of the laboratory.
For more detailed information, please see the Publications
List.
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