The main interest of this laboratory is to study the thin film related microelectronic or opto-electronic devices. The ultimate goal is to correlate material properties to their process conditions and to the device characteristics. Materials involved in this laboratory are Si-based semiconductors (PECVD, a-Si:H, microcrystalline silicon, n+, and p+), dielectrics (Si-based, High k gate dielectrics, low k interlayer dielectric, metal oxides, etc.), and conductors (copper, aluminum, refractory metals, indium tin oxide ITO, etc.). Processes used for these studies are deposition (PECVD, sputtering, CVD, etc.), etching (RIE, wet, etc.), lithography, thermal annealing (RTP, furnace, plasma, etc.), and doping (plasma, etc.).
Currently, the following five areas are being actively researched in this laboratory:
3. a-Si:H and polycrystalline silicon TFT technology,
4. Thin film deposition by Sputtering and PECVD, and
Photos of Laboratory and Equipment:
Videos of the laboratory.
For more detailed information, please see the Publications List.