PECVD
is an important deposition method for the fabrication of VLSI and TFTs. It has two advantages compared with the conventional
CVD method: low process temperature and flexible film properties. The former
satisfies the low thermal budget requirement for most production. The latter
makes it possible to tailor film properties for specific device
characteristics. However, the plasma nature of the process could damage some
films and deteriorate the device. The goal of this research is to understand
the fundamental mechanism of the process by correlating the process parameters,
film properties, and device characteristics. The following are examples of some
results obtained in this area. For more detailed information, please see the Publications list.
- Damage to SiNx surface: Transfer Characteristics as a Function of a-Si:H Dep. Power
Y.
Kuo, JECS, 142(7), 2486, 1995.
-
Resistivity as a Function of Diborane Flow Rate
H. Nominanda and Y. Kuo, ECS Extended Abst. Intl.
Plasma Processing XIV, 2002.
-
Deposition Rate vs. Temperature for and B2H6
Flow Rate
H. Nominanda and Y. Kuo, ECS Proc. XIV Plasma
Processing, 2002-17, 1-9, 2002.
- Film’s Si-O/Si-Si vs. B2H6
Flow Rate
H. Nominanda and Y. Kuo, ECS Proc. XIV Plasma
Processing, 2002-17, 1-9, 2002.
-
Resistivity as a function of SiH4 flow rate and the microcrystalline
formation
|
|
- Critical Power
Wcritical Concept
- Unified relation for deposition process, material properties, and plasma
phase chemistry
- Low temperature deposition (100°C)
SiNx
Dep. Rate as a Function of Power and Gas Composition
Y. Kuo, APL, 63(2), 144, 1993.
- SiNx as a Function of Plasma Power and Gas
Composition
Y. Kuo, APL 63(2), 144, 1993. |
FTIR
of N-rich SiNx Films
Y. Kuo, et. al., ECS Proc. 94-20, 513, 1994. |
-
Temperature vs. Chemical Bonds
Y. Kuo and H. H. Lee, Proc. 6th ISSP, 217,
2001.
Y. Kuo and H. H. Lee, Vacuum, 66, 299-303, 2002.
Y. Kuo and H. H. Lee, Vacuum, 66, 299-303, 2002.
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