Plasma Enhanced Chemical Vapor Deposition (PECVD)


PECVD is an important deposition method for the fabrication of VLSI and TFTs. It has two advantages compared with the conventional CVD method: low process temperature and flexible film properties. The former satisfies the low thermal budget requirement for most production. The latter makes it possible to tailor film properties for specific device characteristics. However, the plasma nature of the process could damage some films and deteriorate the device. The goal of this research is to understand the fundamental mechanism of the process by correlating the process parameters, film properties, and device characteristics. The following are examples of some results obtained in this area. For more detailed information, please see the Publications list.


a-Si:H Deposition

- Damage to SiNx surface: Transfer Characteristics as a Function of a-Si:H Dep. Power

 

Y. Kuo, JECS, 142(7), 2486, 1995.

P+ Deposition, below 250C

-         Resistivity as a Function of Diborane Flow Rate

H. Nominanda and Y. Kuo, ECS Extended Abst. Intl. Plasma Processing XIV, 2002.

 

p- and p+ Deposition

-   Deposition Rate vs. Temperature for and B2H6 Flow Rate



H. Nominanda and Y. Kuo, ECS Proc. XIV Plasma Processing, 2002-17, 1-9, 2002.

 

-   Films Si-O/Si-Si vs. B2H6 Flow Rate

 

H. Nominanda and Y. Kuo, ECS Proc. XIV Plasma Processing, 2002-17, 1-9, 2002.

 

n+ Deposition

- Resistivity as a function of SiH4 flow rate and the microcrystalline formation

Y. Kuo and K. Latzko, MRS Proc. 507, 891 (1998). Y. Kuo, APL 71(19), 2821 (1997).

SiNx Deposition

- Critical Power Wcritical Concept
- Unified relation for deposition process, material properties, and plasma phase chemistry
- Low temperature deposition (100C)

SiNx Dep. Rate as a Function of Power and Gas Composition

   

Y. Kuo, APL, 63(2), 144, 1993.

- SiNx as a Function of Plasma Power and Gas Composition

 

Y. Kuo, APL 63(2), 144, 1993.

FTIR of N-rich SiNx Films

 

 

Y. Kuo, et. al., ECS Proc. 94-20, 513, 1994.

-   Temperature vs. Chemical Bonds

Y. Kuo and H. H. Lee, Proc. 6th ISSP, 217, 2001.

- Low Temperature Deposition

 

Y. Kuo and H. H. Lee, Vacuum, 66, 299-303, 2002.

 

-   Etch Rate vs. RI and Deposition Temperature

 

 

Y. Kuo and H. H. Lee, Vacuum, 66, 299-303, 2002.

 

 

 


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