Recent Publications


Editor 

 

1.                 Y. Kuo, Technical Editor, ECS J. Solid State Science and Technology, 2012-now.

2.                 Y. Kuo, Associate Editor, J. Electrochemical Society, 2003-2012.

3.                 Y. Kuo, ECS Transactions Thin Film Transistor Technologies 11, 50(8), Electrochem. Soc., Pennington, 2012. 

4.                 A. Flewitt, Y. Kuo, and J. Jang, Guest Editors, IEEE J. Display Technology, special issue on TFTs, 8(1), 2012.

5.                 Q. Lin, R. Huang, R. Liu, C. Claeys, K. Lai, T. Jiang, D. Huang, Y. Zhang, P. Song, H. Wu, Z. Guo, C. Lam, Y. Kuo, and S. Wang,  ECS Transactions China Semiconductor Technology International Conference 2012, 44(1), Electrochem. Soc., Pennington, 2012.

6.                 Y. Kuo and G. Bersuker, 3rd Eng. Conf. Intl. ULSIC vs. TFT Conference, ECS Transactions, 37(1), Electrochem. Soc., Pennington, 2011. 

7.                 H. Wu, Q. Lin, C. Claeys, D. Huang, Y. Kuo, R. Huang, K. Lai, Y. Zhang, A. Philipossian, R. Liu, T. Jiang, P. Song, S. Xiaoping,  ECS Transactions China Semiconductor Technology International Conference 2011, 34(1), Electrochem. Soc., Pennington, 2011.

8.                 Y. Kuo, ECS Transactions Thin Film Transistor Technologies 10, 33(5), Electrochem. Soc., Pennington, 2010. 

9.                 H. Wu, Q. Lin, C. Claeys, D. Huang, Y. Shi, Y. Kuo, R. Huang, P. Song, F. Chen, K. Lai, W. Wang, T. Jiang, A. Philipossian, S. Krishnan,  ECS Transactions China Semiconductor Technology International Conference 2010, 27(1), Electrochem. Soc., Pennington, 2010.

10.            Y. Kuo, 2nd Eng. Conf. Intl. ULSIC vs. TFT Conference, ECS Transactions, 22(1) Electrochem. Soc., Pennington, 2009. 

11.            P. Mascher, P. Joshi, M. E. Overberg, and Y. Kuo, ECS Transactions Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices, 19(8), Electrochem. Soc., Pennington, 2009.

12.            Y. Kuo, ECS Transactions Thin Film Transistor Technologies 9, 16(9), Electrochem. Soc., Pennington, 2008. 

13.            Y. Kuo, D. Ast, and M. Shur, Eng. Conf. Intl. ULSIC vs. TFT Conference, ECS Transactions, 8(1), Electrochem. Soc., Pennington, 2006. 

14.            Y. Kuo, Editor, ECS Transactions Thin Film Transistor Technologies 8, 3(8), Electrochem. Soc., Pennington, 2006.

 

Books   

 

1.                 Y. Kuo, Editor, “Polycrystalline Silicon Thin Film Transistors,” Kluwer Academic Publishers, Norwell, MA, 2003.

2.                 Y. Kuo, Editor, “Amorphous Silicon Thin Film Transistors,” Kluwer Academic Publishers, Norwell, MA, 2003. 

3.                 Y. Kuo, AVS short course lecture book - Plasma Technologies in the Fabrication of Thin Film Transistors for Liquid Crystal Displays, San Jose, 1997; Denver, 1999; Boston, 2000.

 

Special honored or cited papers

 

·                  #1 Most-Cited Article of ECS Transactions as of December 1, 2012
High-k Materials and Processing III:

Yue Kuo, Jiang Lu, Jiong Yan, Tao Yuan, Hyun Chul Kim, Jeff Peterson, Mark Gardner, S. Chatterjee, and W. Luo, “Sub 2 nm Thick Zirconium Doped Hafnium Oxide High-K Gate Dielectrics,” ECS Trans. 2006 1(5): 447-454; doi:10.1149/1.2209294

·                    #4 Most-Cited Article of ECS Transactions as of December 1, 2012
Novel Processes for Advanced Memory Technologies:

Chen-Han Lin and Yue Kuo, “Embedding of Nanocrystalline Ruthenium in ZrHfO High-k Film for Nonvolatile Memories,” ECS Trans. 2008 13(1): 465-470; doi:10.1149/1.2911531  

·                    #29 Most-Cited Article of ECS Transactions as of December 1, 2012

Reliability Issues:

Yue Kuo, “Mixed Oxide High-k Gate Dielectrics - Interface Layer Structure, Breakdown Mechanism, and Memories,” ECS Trans. 2006 3(3): 253-263; doi:10.1149/1.2355717

·                    Three key articles chosen by the Guest Editor of IIE Transactions Volume 44, Issue 7, 2012 Special Issue: Quality and Design Issues in Nanomanufacturing Systems

Chia-Han Yang, Tao Yuan, Way Kuo, and Yue Kuo,“ Non-Parametric Bayesian Modeling of Hazard Rate with a Change Point for Nanoelectronic Devices,” IIE Trans. 44(7), 496-506 (2012).

·                    J. Appl. Phys. Research Highlights & News, April 19, 2012
C.-C. Lin and Y. Kuo, “Failure mechanism of electromigration of copper interconnections deposited on topographic steps with a plasma-based etch process,” J. Appl. Phys., 111, 064909 (2012).

·                    Paper selected by AIP/APS in AIP/APS Virtual J. Nanoscale Sci. and Technol. 24(5) 2011
http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=VIRT01000024000005000104000001&idtype=cvips&gifs=yes

·                    Paper selected by AIP/APS in AIP/APS Virtual J. Nanoscale Sci. and Technol. 22(22) 2010
http://scitation.aip.org/vsearch/servlet/VerityServlet?KEY=VIRT01&smode=results&maxdisp=10&possible1=Yue+Kuo&possible1zone=article&OUTLOG=NO&id= ESLEF6000014000001000H50000001&viewabs=VIRT01&key=DISPLAY&docID=1&page=0&chapter=0

·                    Paper selected by AIP/APS in AIP/APS Virtual J. Nanoscale Sci. and Technol. 17(21) 2008
http://scitation.aip.org/vsearch/servlet/VerityServlet?KEY=VIRT01&smode=results&maxdisp=10&possible1=Yue+Kuo&possible1zone= article&OUTLOG=NO&id= JAPNDE000047000003001845000001&viewabs=VIRT01&key=DISPLAY&docID=2&page=0&chapter=0

·                    Paper selected by AIP/APS in AIP/APS Virtual J. Nanoscale Sci. and Technol. 17(17) 2008 
http://scitation.aip.org/dbt/dbt.jsp?KEY=VIRT01&Volume=CURVOL&Issue=CURISS

·                    Top 20 most downloaded paper in Jpn. J. Appl. Phys.2008 
http://www.ipap.jp/jjap/index.htm

·                    3rd poster award in ECI Semiconductor Conference, Italy, 2007

·                    Paper selected by AIP/APS in Virtual J. Bio. Phys. Res. 15(10), 2008.
http://www.vjbio.org/vsearch/servlet/VerityServlet?KEY=VIRT02&smode=results&maxdisp=10&possible1= Yue+Kuo&possible1zone=article&OUTLOG=NO&id=JAPNDE000047000004002300000001&viewabs=VIRT02&key= DISPLAY&docID=1&page=0&chapter=0 

·                    Paper selected by AIP/APS in Virtual J. Nanoscale Sci. and Technol. 13(15) 2006  
http://scitation.aip.org/dbt/dbt.jsp?KEY=VIRT01&Volume=13&Issue=15.

·                    Paper selected by AIP/APS in Virtual J. Bio. Phys. Res. 11(8), 2006.
http://www.vjbio.org/vsearch/servlet/VerityServlet?KEY=VIRT02&smode=results&maxdisp=10&possible1= Yue+Kuo&possible1zone=article&OUTLOG=NO&id=ESLEF6000009000006000J21000001&viewabs=VIRT02&key=DISPLAY&docID=2&page=0&chapter=0

·                    Top 25 Hottest paper in Microelectronics Reliability 2006
http://top25.sciencedirect.com/index.php?cat_id=7&subject_area_id=7&journal_id=00262714.

·                    Citation in news media Semiconductor International (02/02), C&E News, Reuters, Industry Week, and Semiconductor International Electronic News (04/01/02), etc.

·                    “Tech Highlights” section of Interface (June 1994)

·                    Semiconductor International (p.6 and p.22, June 1992)

 

Papers     

 

1.                 C.-C. Lin and Y. Kuo, “Temperature Effects on Nanocrystalline Molybdenum Oxide Embedded ZrHfO High-k Nonvolatile Memory Functions,” ECS J. Solid State Sci. Technol., 2(1) Q16-Q22 (2013).

2.                 Y. Kuo and C.-C. Lin*, “Crystallization of a-Si Thin Film Using an Ultra Thin n+ Poly-Si Seed Layer for Solar Cell Applications,” IEEE 38th Photovoltaic Specialist  Conf. PVSC, 000342-000345 (2012).

3.                 X. Liu, C.-H. Yang, Y. Kuo, and T. Yuan, “Memory Functions of Molybdenum Oxide Embedded ZrHfO High-k,” Electrochem. Solid-State Letters, 15 (6) H1-H3 (2012).

4.                 C.-C. Lin and Y. Kuo, “Plasma etching of copper thin film over a dielectric step and electromigration failure mechanism,” 2012 MRS Proc. Symp. C: Interconnect Challenges for CMOS Technology, 1428, mrss12-1428-c05-03 (2012). Doi:10.1557/opl.2012.1313. 

5.                 S.-H. Wu, Y. Kuo, and C.-C. Lin, “Light wavelength effects on the performance of a-Si:H PIN photodiode,” 2112 MRS Proc. Symp. A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology, 1426, 199-204 (2012).  

6.                 Y. Kuo and C.-C. Lin, “Polycrystalline Silicon Thin Films Formed by Multiple Pulsed Rapid Thermal Annealing,” MRS Proc. Symp. A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology, 1426, 269-274 (2012).  

7.                 Y. Kuo, X. Liu*, C.-H. Yang*, and C.-C. Lin*, “Nonvolatile Memory Characteristics of Molybdenum Oxide Embedded High-k Film - Performance and Light Wavelength Effects,” 2112 MRS Proc. Symp. E: Materials And Physics of Emerging Nonvolatile Memories, 1430, 21-27 (2012).

8.                 C.-C. Lin and Y. Kuo, “Step effect on Cl2 plasma-based copper etch process,” J. Vac. Sci. Technol. B, 30(2) 021204-1 (2012).

9.                 C.-C. Lin and Y. Kuo, “Failure mechanism of electromigration of copper interconnections deposited on topographic steps with a plasma-based etch process,” J. Appl. Phys., 111, 064909 (2012). This paper was selected as a Research Hights & News from J. Appl. Phys. April 19, 2012.

10.            A. Birge and Y. Kuo, “Memory Functions of Nanocrystalline ITO Embedded Zirconium-Doped Hafnium Oxide High-k Capacitor with ITO Gate,” J. Electrochem. Soc., 159(6) H595-H598 (2012). 

11.            B. Luo, C.-H. Lin, and Y. Kuo, “Light Effects on Charge Trapping and Detrapping of nc-ZnO Embedded ZrHfO High-k MOS Nonvolatile Memories,” ECS Trans. 41(3), 93-100 (2011). 

12.            S. Chatterjee and Y. Kuo, “Effects of Interfacial Charges on Doped and Undoped HfOx Stack Layer with TiN Metal Gate Electrode for Nano-Scale CMOS Generation,” J. Nano-Electron. Phys., 3(1), 155-162 (2011). C.-H. Lin and Y. Kuo, “Ruthenium modified Zr-doped HfO2 high-k thin films with low equivalent oxide thickness,” J. Electrochem. Soc., 158(7), G162-G168 (2011).

13.            C.-H. Yang, T. Yuan, W. Kuo, and Y. Kuo, “Nonparametric Bayesian Modeling of Hazard Rate with a Change-Point for Nanoelectronic Devices,” IIE Trans. Special issue on Quality, Sensing and Prognostics Issues in Nanomanufacturing, DOI: 10.1080/0740817X.2011.587864, June 2011.    

14.            C.-H. Lin and Y. Kuo, “Ruthenium modified Zr-doped HfO2 high-k thin films with low equivalent oxide thickness,” J. Electrochem. Soc., 158(7), G162-G168 (2011).

15.            C.-H. Lin and Y. Kuo, “Single- and Dual-Layer Nanocrystalline Indium Tin Oxide Embedded ZrHfO High-k Films for Nonvolatile Memories – Material and Electrical Properties,  J. Electrochem. Soc., 158(8), H756-H762 (2011).  

16.            C.-H. Lin and Y. Kuo, “Charge Trapping and Detrapping in nc-RuO Embedded ZrHfO High-k Thin Film for Memory Applications,” J. Appl.Phys., 110, 024101 (2011). This paper was selected by AIP Virt. J. Nan. Sci. Tech. 24(6) (2011).  

17.            Y. Kuo, invited “Status Review of Nanocrystals Embedded High-k Nonvolatile Memories,” ECS Trans.Dielectrics in Nanosystems and Graphene, Ge/III-V, Nanowires and Emerging Matrials for Post-CMOS Applications 3, 35(3), 13-31(2011).

18.            C.-H. Lin and Y. Kuo, “Material and Electrical Properties of Hole-Trapping Memory Capacitors Composed of nc-ITO Embedded ZrHfO High-k Films,” ECS Trans. 35(2), 249-255 (2011).     

19.            M. Zhu, C.-H. Lin and Y. Kuo, “Process and Material Study of a Novel Low Thermal Budget Process for Large Scale Thin Film Poly-Si Solar Cell Fabrication,” MRS Proc., 1-1321-a03-05 (2011). 

20.            C.-H. Yang, Y. Kuo, C.-H. Lin and W. Kuo,Temperature Effect on Charge Transfer Mechanisms of nc-ITO Embedded ZrHfO High-k Nonvolatile Memory,” MRS Proc. 1337, DOI: 10.1557/opl.2011.1068 (2011).  

21.            C.-H. Yang, Y. Kuo, C.-H. Lin, and W. Kuo, “Temperature Influence Nanocrystals Embedded High-k Nonvolatile C-V Characteristics,” Electrochem. Solid-State Lett., 14(1), H50-H52 (2011).  This paper was selected by AIP Virt. J. Nan. Sci. Tech. 22(22) (2010). 

22.            Y. Kuo, “Hysteresis of Transfer Characteristics of Floating-Gate a-Si:H Thin Film Transistor Nonvolatile Memories,” Electrochem. Solid-State Lett., 13(12), H460-463 (2010).

23.            Y. Kuo, invited, “Performance and Reliability of Nanocrystals Embedded High-k
Nonvolatile Memories,”
ECS Trans. High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics, 33(3), 425-430 (2010).   

24.            C.-H. Yang, Y. Kuo, C.-H. Lin, and W. Kuo, “Stress-Induced Deterioration of Nanocrystalline ITO Embedded ZrHfO High-k Nonvolatile Memories,” ECS Trans. High Dielectric Constant and Other Dielectric Materials for Nano-electronics and Photonics, 33(3), 307-311 (2010). 

25.            Y. Kuo, invited, “Mechanism and Performance of Floating-Gate a-Si:H TFT Nonvolatile Memory Devices,” ECS Trans. Thin Film Transistors 10 (TFT 10), 33(5), 357-364 (2010). 

26.            C.-H. Lin, C.-H. Yang, and Y. Kuo, “Hole-Trapping Mechanism and SILC of Dual-Layer nc-ITO Embedded ZrHfO High-k Nonvolatile Memories,” ECS Trans. Adv. Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment, 28(1), 269-276 (2010).

27.            C.-H. Lin and Y. Kuo, “Charge Trapping Sites in nc-RuO embedded ZrHfO High-k Nonvolatile Memories,” MRS Proc. Materials and Physics of Nonvolatile Memories, 1250-G01-08 (2010).   

28.            Y. Kuo, invited, “Influence of Embedded a-Si:H Layer Location on Floating-Gate a-Si:H TFT Memory Functions,” MRS Proc., 1245-A12-01 (2010).   

29.            C.-H. Yang, Y. Kuo, and C.-H. Lin, “Charge detrapping and dielectric breakdown of nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high-k dielectrics for nonvolatile memories,” Appl. Phys. Letts., 96, 192106 (2010).

30.            T. Yuan and Y. Kuo, “Bayesian Analysis of Hazard Rate, Change Point, and Cost-Optimal Burn-in Time for Electronic Devices,” IEEE Trans. Reliability, 59(1), 132-138 (2010).

31.            C.-H. Lin and Y. Kuo, “Nonvolatile Memories with Dual-layer Nanocrystalline ZnO Embedded Zr-doped HfO2 High-k Dielectric,” Electrochem. Solid-State Lett.   13(3) H83-86 (2010).

32.            C.-H. Yang, Y. Kuo, C.-H. Lin, and W. Kuo, “Failure Analysis of Single and Dual nc-ITO Embedded ZrHfO High-k Nonvolatile Memories,” ECS Trans. Physics and Technology of High-k Gate Dielectrics 7, 25(6), 457-464 (2009).

33.            C. Lin and Y. Kuo, invited, “Single and Dual ITO and ZnO Embedded ZrHfO High-k Nonvolatile Memories,” ECS Trans. Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices, 19 (8) 81-87 (2009).

34.            C.-H. Yang, Y. Kuo, C.-H. Lin, and W. Kuo, “Temperature Influence on Nanocrystals Embedded High-k Nonvolatile Memories,” ECS Trans. Adv. Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment, 19 (1) 41-47 (2009).

35.            C.-H. Yang, Y. Kuo, C.-H. Lin, and W. Kuo, “Reliability of nc-ZnO Embedded ZrHfO High-k Nonvolatile Memory Devices Stressed at High Temperatures,” MRS Proc., 1160-H02-01 (2009).   

36.            Y. Kuo, invited, “Plasma-Based Copper Etch Process for TFT and IC Fabrications - History and Status,” Proc. 16th Intl. Workshop on Active-Matrix Flat Panel Displays and Devices, 211-214 (2009). 

37.            Y. Kuo and M. Coan, “Mechanical Bending Effects on Charge and Discharge Characteristics of a-Si:H TFT Nonvolatile Memories,” Proc. 16th Intl. Workshop on Active-Matrix Flatpanel Displays and Devices, 259-262 (2009).

38.            G. Liu and Y. Kuo, “Electromigration of Copper Lines Patterned with a Plasma-based Etch Process,” J. Electrochem. Soc., 156(6) H579-H584 (2009).

39.            Y. Kuo and H. Nominanda, “Charge and Discharge of Floating-Gate a-Si:H TFT Nonvolatile Memories,” J. Korean Phys. Soc., 54(1), 409-414 (2009).

40.            Y. Kuo, invited, “A-Si:H TFT Nonvolatile Memories and Copper Interconnect
for Rigid and Flexible Electronics,” ECS Trans. Semiconductor Technol. ULSI vs. TFT, 22(1) 183-190 (2009).  

41.            Y. Kuo, invited, “PECVD for Flexible Displays – Advantages and Limitations,” Abstract, ECS Symp. Novel Plasma Techniques for Low Temperature Processing of Thin Films for Flexible Electronics, # 0772 (2009). 

42.            C.-H. Lin and Y. Kuo, “Mechanisms of Charge Storage in Nanocrystal Ruthenium Oxide Embedded ZrHfO High-k Film,” Electrochem. Soc. Trans. Physics and Technology of High-k Gate Dielectrics 6, 16(5), 309-316 (2008).

43.            C.-H. Yang, Y. Kuo, R. Wan, C.-H. Lin, and W. Kuo, invited, “Failure Analysis of Nanocrystals Embedded High-k Dielectrics for Nonvolatile Memories,” IEEE Intl. International Reliability Physics Symp. Proc., 46-49 (2008). 

44.            C.-H. Yang, Y. Kuo, C.-H. Lin, R. Wan, C.-H. Lin, and W. Kuo, “Relaxation Behavior and Breakdown Mechanisms of Nanocrystals Embedded Zr-doped HfO2 High-k Thin Films for Nonvolatile Memories,” MRS Procs. Materials Science and Technology for Nonvolatile Memories, 1071-F02-09 (2008).

45.            J. Lu, C.-H. Lin, and Y. Kuo, “Nanocrystalline Zinc Oxide Embedded Zirconium-doped Hafnium Oxide for Nonvolatile Memories,” J. Electrochem. Soc., 155(6) H386-H389 (2008). This paper was selected by AIP Virtual J. Nanoscale Sci. and Technol. 17(17) 2008.

46.            G. Liu, Y. Kuo, S. Ahmed, D. N. Buckley, and T. Tanaka-Ahmed, “Grain Size Effect on Plasma-based Copper Etch Process,” J. Electrochem. Soc., 155(6) H432-H437 (2008).

47.            G. Liu and Y. Kuo, “Additive Gas Effect on the Cl2 Plasma-based Copper Etch Process and Sidewall Attack,” J. Electrochem. Soc., 155(2) H97-H102 (2008). 

48.            H. H. Lee and Y. Kuo, “Surface Modificaiotn of a Gel-Free Microchannel Electrophoresis Device for DNA Identification, Jpn. J. Appl. Phys., 47(4) 2300–2305 (2008).

49.            Y. Kuo, M. Coan, and G. Liu, “Reliability of a-Si:H TFTs and Copper Interconnect Lines for Flexible Electronics,”  Electrochem. Soc. Trans. TFT 9, 16(9), 345-351 (2008).

50.            R. Wan, J. Yan, Y. Kuo, and J. Lu, “Dielectric Breakdown and Charge Trapping of Ultrathin ZrHfO/SiON High-k Gate Stacks,” Jpn. J. Appl. Phys., 47(3), 1639-1641 (2008).

51.            S. Chatterjee, Y. Kuo, and J. Lu, “Thermal Annealing Effect on Electrical Properties of Metal Nitride Gate Electrodes with Hafnium Oxide Gate Dielectrics in Nano-metric MOS Devices,” Microelectronic Engineering, 85(1), 202-209 (2008).

52.            Y. Kuo and H. Nominanda, invited, “Charge and Discharge of Floating Gate a-Si:H TFT Nonvolatile Memories,” Proc. 4th Intl. Thin-Film Transistor Conf., 269-272 (2008).

53.            Y. Kuo, “TFT and ULSIC – Competition or Collaboration,” Jpn. J. Appl. Phys., 47(3), 1845-1852 (2007).  This paper was selected the Top 20 most downloaded papers in the journal for 3 months continuously. http://www.ipap.jp/jjap/index.htm.    

54.            G. Liu and Y. Kuo, “Reactive Ion Etching of Titanium Tungsten Thin Films,” J. Electrochem. Soc., 154(7), H653-H658 (2007). 

55.            A. Birge and Y. Kuo, “Nonvolatile MOS Memory Capacitors with Nanocrystalline Indium Tin Oxide Embedded Zirconium-Doped Hafnium Oxide High-k Dielectric,” J. Electrochem. Soc., 154(10), H887-H893 (2007). 

56.            H. Nominanda and Y. Kuo, “Memory functions of amorphous silicon based floating gate MIS capacitors,” Electrochem. Solid-State Letts., 10(8), H232-H235 (2007).

57.            Y. Kuo and H. Nominanda, “Amorphous Silicon Based TFT and MIS Nonvolatile Memories,” MRS Symp. Proc. Amorphous and Polycrystalline Thin-Film Silicon Science and Technology, 989, A10-03, in press (2007). 

58.            Y. Kuo, invited, “ULSIC vs. TFT – What can they learn from each other?” ECS Trans.  Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, 8(1), 45-50 (2007).

59.            J. Yan, Y. Kuo, and J. Lu, “Zirconium doped Hafnium Oxide High-k Gate Dielectrics with sub-nanometer Equivalent Oxide Thickness by Reactive Sputtering,” Electrochem. Solid-State Letts., 10(7), H199-H202 (2007).

60.            S. Ahmed, D.N. Buckley, S. Nakahara, T. T. Ahmed, and Y. Kuo, “An Isothermal Annealing Study of Spontaneous Morphology Change in Electrodeposited Copper Metallization,J. Electrochem. Soc., 154(3) D103-D112 (2007). 

61.            C.-H. Lin, Y. Kuo, and J. Lu, “Influence of Ru Dopant on the Dielectric Properties of Zr-doped HfO2 High-k Thin Film,” Electrochem. Soc. Transactions Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 3: New Materials, Processes and Equipment, 6(1), 121-127 (2007).

62.            Y. Kuo, Electronics Award presentation, “Thin Film Transistor and ULSIC Technologies - Parallel or Crossing?”  Electrochem. Soc. Transactions Silicon-on-Insulator Technology and Devices 13, 6(4), 121-132 (2007). 

63.            H. Nominanda, Y. Kuo, C.-C. Chen, and C.-C. Hwang, “Radiation Exposure Effect on Amorphous Silicon Thin Film Transistors, ECS Trans. Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, 8(1), 261-266 (2007). Selected for the 3rd award poster paper. 

64.            Y. Kuo, plenary speech, “TFT and ULSIC – Competition or Collaboration, AM-FPD 07 Digest of Technical Papers, 1-4 (2007). 

65.            Y. Kuo, invited, “TFTs Beyond LCD Pixel Driving and Experience for 450 mm ULSIC Process Development,” Intl. Display Manufacturing Conf. Proceedings, 209-212 (2007).

66.            A. Birge and Y. Kuo, “Nonvolatile MOS Memory Capacitors with Nanocrystalline Indium Tin Oxide Embedded Zirconium-Doped Hafnium Oxide High-k Dielectric,” J. Electrochem. Soc., 154(10), H887-H893 (2007). 

67.            H. Nominanda and Y. Kuo, “Memory functions of amorphous silicon based floating gate MIS capacitors,” Electrochem. Solid-State Letts., 10(8), H232-H235 (2007).

68.            W. Luo, T. Yuan, Y. Kuo, J. Lu, J. Yan, and W. Kuo, “Breakdown Phenomena of Zirconium-Doped Hafnium Oxide High-k Stack with an Inserted Interface Layer,” Appl. Phys. Letts., 89, 072901 (2006).

69.            Y. Kuo and H. Nominanda, “Nonvolatile hydrogenated-amorphous-silicon thin-film-transistor memory devices,” Appl. Phys. Letts., 89(1), 89, 173503 (2006).  

70.            J. Lu, Y. Kuo, J. Yan, and C.-H. Lin, “Nanocrystalline Silicon Embedded Zirconium-doped Hafnium Oxide High-k Memory Device,” Jpn. J. Appl. Phys., 45(34), L901-L903 (2006).

71.            Y. Kuo, invited, “Mixed Oxide High-k Gate Dielectrics - Interface Layer Structure, Breakdown Mechanism, and New Memories,ECS Trans. 4th International Symposium on High Dielectric Constant Gate Stacks, 3(3), 253-266 (2006).

72.            W. Luo, T. Yuan, Y. Kuo, J. Lu, J. Yan, and W. Kuo, “Charge Trapping and Dielectric Relaxation in Connection with Breakdown of High-k Gate Dielectric Stacks” Appl. Phys. Letts., 88, 202904 (2006).

73.            Y. Kuo, invited, “Mixed Oxides as High-k Gate Dielectric Films,” Electrochem. Soc. Trans. Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing, Eds, D. Misra, H. Iwai, 2(1), 13-22 (2006).

74.            H. H. Lee and Y. Kuo, “Integration of an Amorphous Silicon Thin Film Transistor with a Microchannel Electrophoresis for Protein Identification,” Electrochem. Solid-State Letts., 9, J21-J23 (2006). This paper was selected by AIP to appear in Virtual Journal of Nanoscale Science & Technology, 13(15), 2006.  

75.            J. Lu and Y. Kuo, “Hafnium-Doped Tantalum Oxide High-k Dielectrics with Sub-2 nm Equivalent Oxide Thickness,” Appl. Phys. Lett., 87(23), 232906 (2005).

76.            J. Lu, Y. Kuo, and J.-Y. Tewg, “Hafnium-doped Tantalum Oxide High-k Gate Dielectrics,” J. Electrochem. Soc., 153, G410-G416 (2006).  

77.            J. Lu, Y. Kuo, S. Chatterjee, and J.-Y. Tewg, “Metal Nitride Gate Electrode Effects on Dielectric Properties of HfO2 High-k Gate Dielectrics,” JVST B, 24(1), 349-357 (2006).

78.            S. Chatterjee, J. Lu, J.-Y. Tewg, Y. Kuo, and P. Majhi, “Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress,” Microelectronics Reliability, 46/1, 69-76 (2006). This paper was elected a hottest TOP25 article in Microelectronics and Reliability Journal published in Science Direct by Elsevier Publishers http://top25.sciencedirect.com/index.php?cat_id=7&subject_area_id=7&journal_id=00262714.         

79.            Y. Kuo, J. Lu, and H. Nominanda, “Sputter Deposition of nm-Thick Films for Passivation of Organic Pellicles,” Vacuum, 80, 698-703 (2006).

80.            Y. Kuo, H. Nominanda, and G. Liu, “n-channel and p-channel a-Si: H Thin Film Transistors with Copper Electrodes,” J. Korean Physical Soc., 48, S92-S97 (2006). 

81.            Y. Kuo, invited, “New Development of Non-LCD Applications of Thin Film Transistors,” Digest of Technical Papers AM-FPD 06, 77-79, 2006. 

82.            Y. Kuo, “Plasma-Copper Reaction Mechanism in a Novel Copper Dry Etching Process,” Procs. 6th Intl. Conf. On Reactive Plasmas and 23rd Symp. Plasma Processing, 29-30 (2006).

83.            Y. Kuo, J. Lu, S. Chatterjee, J. Yan, H. C. Kim, T. Yuan, W. Luo, H. C. Kim, J. Peterson, and M. Gardner, S. Chatterjee, W. Luo, “Sub 2 nm Thick Zirconium Doped Hafnium Oxide High-K Gate Dielectrics,” ECS Trans. High Dielectric Constant Gate Stacks III, 1(5), 447-454 (2005).    

84.            G. Liu and Y. Kuo, “Control of Edge Shape, Sidewall Profile, and Sidewall Roughness of the Plasma Etched Copper,” Elecrochem. Soc.  Trans., Ed. G. Mathad, M. Engelhardt, K. Kondo, H. Rathore, 1(11), 169-176 (2006).    

85.            Y. Kuo and J. Lu, “Bulk and Interface Material and Electrical Properties of Hafnium-Doped Tantalum Oxide High-K Films,” Elecrochem. Society Transactions High Dielectric Constant Gate Stacks III, 1(5), 177-183 (2005).     

86.            M. Ristova, Y. Kuo, H. H. Lee, and J.-Y. Tewg, “Effect of Long-term He–Ne Laser Light Exposure and Subsequent Annealing on Hydrogenated Amorphous Silicon PIN Photodiodes,” Semiconductor Science and Technology, 20, 1005-1009 (2005).

87.            S. Chatterjee, Y. Kuo, J. Lu, J.-Y. Tewg, and P. Majhi, “Effects of Post Metallization Annealing on the Electrical Reliability of Ultra-thin HfO2 Films with MoN and WN Gate Electrode,” IEEE Intl. Reliability Physics Symp. Procs., 626-627 (2005).

88.            J.-Y. Tewg,Y. Kuo, and J. Lu, “Suppression of Crystallization of Tantalum Oxide Thin Film by Doping with Zirconium,” Electrochem. and Solid-State Letters, 8(1), G27-G29 (2005).

89.            J.-Y. Tewg, Y. Kuo, J. Lu, and B. W. Schueler, “Influence of a 5 Å Tantalum Nitride Interface Layer on Dielectric Properties of Zirconium-Doped Tantalum Oxide High-k Films,” J. Electrochem. Soc., 152(8), G617-G622 (2005).

90.            J.-Y. Tewg, Y. Kuo, and J. Lu, “Zirconium-Doped Tantalum Oxide Gate Dielectric Films Integrated with Molybdenum, Molybdenum Nitride, and Tungsten Nitride Gate Electrodes,” J. Electrochem. Soc., 152(8), G643-G650 (2005).

91.            S. Chatterjee, J. Lu, J.-Y. Tewg, Y. Kuo, and P. Majhi, “Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress,” Microelectronics Reliability, 46/1, 69-76 (2005).  

92.            Y. Kuo, J. Lu, and H. Nominanda, “Sputter Deposition of nm-Thick Films for Passivation of Organic Pellicles,” Proc. 8th Intl. Symp. Sputtering and Plasma Processes, ISSP 2005, 185-188 (2005).

93.            Y. Kuo, invited keynote, “Doping of High-k Dielectric Thin Films for Future Nano MOSFETs,” 2005 Proc., Proc. Symp. Nano Device Technology, 3-7 (2005). 

94.            Y. Kuo, H. Nominanda, and G. Liu, invited. “n- and p-channel a-Si:H TFTs with copper electrodes,” Proc. 1st International TFT Conference ’05, 6-9 (2005).      

 


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