Pulsed Rapid Thermal Annealing


 

Pulsed Rapid Thermal Annealing (PRTA) was first presented by Y. Kuo in 1996. It is a low thermal budget process that can be used to treat large-area samples for the purpose of crystallization or removal of defects in thin films without warping the underneath low temperature substrate. 

 

We have successfully prepared the thin film poly-Si film on glass used PRTA on Corning glasses for TFT and solar cell fabrications. 

 


PRTA Process

-        For the poly-Si TFT application, the a-Si film was crystallized in the direction parallel to the substrate surface.  See the TFTs  section for an example. 

 

 

Raman spectra of (a) 10-pulse PRTA poly-Si and (b) 500C furnace annealing poly-Si. 

Y. Kuo and P. Kozlowski, APL 69(8) 1091 (1996).

 

-        For the thin film solar cell application, the a-Si pin was crystallized in the direction perpendicular to the substrate surface. See the Thin Film Solar Cells section for an example.  

 

 

  

                                           Programmed and actual temperature profiles of a 10-pulse PRTA process.         XRD of poly-Si              

35th IEEE Photovoltaic Specialist Conf. Proc. PVSC 35, 3698, 2010.

 

                       Mechanism of Vertical Crystallization

 

(a)

 

(b)

 

 

                                     Figure  (a) NiSi2 formation at the early stage and (b) after propagation through the complete nip stack.

 35th IEEE Photovoltaic Specialist Conf. Proc. PVSC 35, 3698, 2010.

 

 

 

 

 

 


 


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