Reactive Ion Etching (RIE)
We are interested in understanding the plasma
etching mechanism, which includes plasma phase chemistry, plasma-surface
reactions, and surface reactions. We specialize in studying etch processes of
non-conventional thin-film materials such as copper, indium tin oxide, metal
oxides, a-Si:H, SiNx, and SiGex,
for future generations of VLSI, TFT, and other
microelectronics or opto-electronics. High
temperature RIE is a powerful method that has the advantages of a simple
reactor design and being easy to transfer to accommodate large substrates (e.g.
12" for VLSI and 1m x 1m for TFT LCDs). Some examples of recent results
are shown as follows. For more detailed information, please see the Publications List.
Plasma-Based Copper Dry Etching Process
- the first world record of room temperature plasma etch
process
RIE of TiW Cu Barrier and Selectivity to PECVD SiNx
G. Liu and Y. Kuo, JES 154(7) H653 (2007)
Selectivity RIE of
PECVD n+ to intrinsic a-Si:H
Y. Kuo and M. Crowder, JES 139(2), 548 (1992).
Selectivity RIE of
PECVD n+ to SiNx
Y. Kuo and M. Crowder, JES 139(2), 548 (1992).
RIE of Indium Tin
Oxide (ITO)
- Non-Additive Feed Gas Effect and Loading Factors
Y. Kuo, JES 145(12) 4313
(1998)
HBr Etched
|
HBr/CH4
(60%) Etched
|
Y. Kuo, ECS Plasma Processing Symp. Proc. XII, 1998.
|
Surface Reactions
|
Temperature Effect
Y. Kuo, JJAP 2(5B), L629(1997).
Y. Kuo and T. L. Tai, JECS, 1998 |
Modification of
Patterned Photoresist
Hydrogenated photoresist
is more resistant to plasma etching
Y. Kuo, APL, 2
(1A1B), L 126, 1993.
Plasma Damages to TFTs and Repairment
Y. Kuo, APL, 61(23), 2790, 1992
Bulk Damage
Surface Damage
Y. Kuo and M. Crowder, JES 139(2), 548 (1992).
Profile Control
Etch Rate
Ratio R
RIE Etched Sloped Molybdenum
Y. Kuo, et. al., J. Vac. Sci. Technology, A8(2), 1529, 1990.
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