a-Si:H TFT Nonvolatile Memories
We invented and studied
the a-Si:H TFT based
nonvolatile memories, which could be fabricated at low temperatures on various
types of rigid and flexible substrates. This kind of device greatly expands the
a-Si:H applications to new
territories, such as low speed circuits, sensors, and flat panel displays.
Floating-Gate
a-Si:H MIS Nonvolatile
Memories
- Device structures
Fig. J-V curves for capacitors (a) without and (b) with a
9 nm embedded a-Si:H layer.
Forward sweep Vg 20 to −20
V, backward sweep Vg −20 to 20 V.
H. Nominanda and Y. Kuo, ESL 10(8) H232 (2007).
- Band structure
Y. Kuo and H. Nominanda, MRS 0989-A10-03 (2007)
- Memory functions
H. Nominanda and Y. Kuo, ESL 10(8) H232 (2007).
Floating-Gate a-Si:H TFT Nonvolatile Memories
- Memory functions
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Y. Kuo and H. Nominanda, APL 89, 173503 (2006).
H. Nominanda and Y. Kuo, ECS Trans. 3, (8) 333 (2006).
- Charge and discharge as functions of Vd
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Y. Kuo and H. Nominanda, MRS 1066-A08-02
(2008).
- Discharge by heating, negative Vg, and light exposure
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Y. Kuo and H. Nominanda, J. Korean Phys. Soc. 54(1) 409 (2009).
- Mechanisms of charging and discharging: C-V hysteresis direction related to gate dielectric structure and operation condition
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Fig. Transfer characterisitcs hysteresis of a floating-gte a-Si:H TFT with a 150 nm channel-contact SiNx layer with Vg swept from (a) -30V to 30V to -30V, (b) -20V to 30V to -20V, and (c) -10V to 30V to -10V.
Y. Kuo, Electrochemical and Solid-State Letters, 13 (12), H460 (2010).
- Mechanical bending effect on charge storage
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Y. Kuo and M. Coan,
AMFPD Proc. 259 (2009).
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