Reactive Ion Etching (RIE)

We are interested in understanding the plasma etching mechanism, which includes plasma phase chemistry, plasma-surface reactions, and surface reactions. We specialize in studying etch processes of non-conventional thin-film materials such as copper, indium tin oxide, metal oxides, a-Si:H, SiN_x, and SiGe_x, for future generations of VLSI, TFT, and other microelectronics or opto-electronics. High temperature RIE is a powerful method that has the advantages of a simple reactor design and being easy to transfer to accommodate large substrates (e.g. 12" for VLSI and 1m x 1m for TFT LCDs). Some examples of recent results are shown as follows. For more detailed information, please see the Publications List.

Plasma-Based Copper Dry Etching Process

- Room Temperature Capability

Vertical Profile:

Y. Kuo and S. Lee. Appl. Phys. Lett. 78(7), 1002-1004, 2001.

S. Lee and Y. Kuo. J. Electrochemical Society. 148(9), G524-529, 2001.

0.8m line:

A 0.8 micrometer Cu line etched by HCl/Ar plasma

Y. Kuo, et al. Proc. ISSP 2003, p. 305-308. and Vac. 2004

Process:

- Exposure Time

HCl Exposed Cu

S. Lee and Y. Kuo, Thin Solid Films, 2003.

- No Plasma vs. Plasma

HCl Exposed Cu – no plasma

HCl Plasma Exposed Cu

S. Lee and Y. Kuo, JJAP 41, 1(12), 2003.

- Structure

CuBr_x from HBr Plasma Exposure

S. Lee and Y. Kuo, Thin Solid Films, 2003.

S. Lee and Y. Kuo, JJAP 41, 1(12), 2002.

- Mechanism

Novel Dry Etching of Copper for ULSI Interconnection

Y. Kuo & S. Lee, Jpn. J. Appl. Phys. 39, 2(3A/B), L801, 2000.

Y. Kuo & S. Lee, APL 78(7), 1002, 2001.

Y. Kuo and S. Lee, ECS Proc. 99-30, 328, 1999.

RIE of Indium Tin Oxide (ITO)

- Non-Additive Feed Gas Effect and Loading Factors

Y. Kuo, Jpn. J. Appl. Phys, 36, 2(5B), L629-L631, 1997.

HBr Etched

HBr/CH4 (60%) Etched

Y. Kuo, ECS Plasma Processing Symp. Proc. XII, 1998.

Surface Reactions

Y. Kuo and T. L. Tai, JECS, 1998

Temperature Effect

Y. Kuo, JJAP, 36(2), 5B, L629, 1997

Modification of Patterned Photoresist

Hydrogenated photoresist is more resistant to plasma etching

Y. Kuo, APL, 2 (1A1B), L 126, 1993.

Plasma Damages to Transistors

Y. Kuo, APL, 61(23), 2790, 1992

Profile Control

Etch Rate Ratio R

RIE Etched Sloped Molybdenum

Y. Kuo, et. al., J. Vac. Sci. Technology, A8(2), 1529, 1998.

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