The
main interest of this laboratory is to study the thin film related
microelectronic or opto-electronic devices. The
ultimate goal is to correlate material properties to their process conditions
and to the device characteristics. Materials involved in this laboratory are
Si-based semiconductors (PECVD, a-Si:H, microcrystalline silicon, n+, and p+),
dielectrics (Si-based, High k gate
dielectrics, low k interlayer dielectric, metal
oxides, etc.), and conductors (copper,
aluminum, refractory metals, indium tin oxide ITO, etc.). Processes used for
these studies are deposition (PECVD, sputtering, CVD,
etc.), etching (RIE, wet, etc.), lithography, thermal
annealing (RTP, furnace, plasma, etc.), and doping (plasma, etc.).
Currently, the following five areas are being actively researched in
this laboratory:
1. RIE of copper and RIE of ITO, a-Si:H, SiNx, metal,
etc.,
2. High k
gate dielectrics for sub-100 nm MOS as well as other microelectronic
devices such as TFTs, capacitors, and diodes,
3. a-Si:H
and polycrystalline silicon TFT technology,
4. Thin film deposition by
Sputtering and PECVD, and
5. Biochips.
Photos of Laboratory and Equipment:
-
Testers
Videos of the laboratory.
For more detailed information, please see the Publications
List.
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