Reactive Ion Etching (RIE)
We are interested in understanding the plasma
etching mechanism, which includes plasma phase chemistry, plasma-surface
reactions, and surface reactions. We specialize in studying etch processes of
non-conventional thin-film materials such as copper, indium tin oxide, metal
oxides, a-Si:H, SiNx, and SiGex,
for future generations of VLSI, TFT, and other
microelectronics or opto-electronics. High
temperature RIE is a powerful method that has the advantages of a simple
reactor design and being easy to transfer to accommodate large substrates (e.g.
12" for VLSI and 1m x 1m for TFT LCDs). Some examples of recent results
are shown as follows. For more detailed information, please see the Publications List.
Plasma-Based Copper Dry Etching Process
- the first world record of room temperature
plasma etch process
- Applications
in commercial IC fabrication – BiCMOS chips
Kuo, Proc. ICRP-6/Spp-23 2006
- Applications
in commercial TFT LCD fabrication – LG 15.0-inch (XGA) LCD
- Applications
in complete Cu source, drain, and gate electrodes in a-Si:H TFT
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Liu & Kuo, ECS Plasma XV proc. 2003.
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Kuo, et
al, JKPS,
2005
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- Room
Temperature Process
Vertical Profile
Y. Kuo and S. Lee. Appl.
Phys. Lett. 78(7),
1002-1004, 2001.
S. Lee and Y. Kuo. J. Electrochemical
Society. 148(9), G524-529, 2001.
0.8m Line
A 0.8
micrometer Cu line etched by HCl/Ar
plasma
Y. Kuo, et al. Proc. ISSP
2003, p. 305-308. and Vac. 2004
- No Plasma vs. Plasma
HCl Exposed Cu – no plasma
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HCl Plasma Exposed Cu
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S. Lee and Y. Kuo, JJAP 41,
1(12), 2003.
- Process Parameters: exposure
time
HCl Exposed Cu
S. Lee and Y. Kuo, Thin
Solid Films, 2003.
- Structures
of plasma-Cu reaction products
CuBrx from HBr
Plasma Exposure
S. Lee and Y. Kuo, Thin
Solid Films, 2003.
S. Lee and Y. Kuo, JJAP 41,
1(12), 2002.
- Grain Size Effects
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Cu film grain size and
resistivity change with temperature
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CuClx formation and Cu
conversion rates vs. temperature
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G. Liu, Y. Kuo, et al.,
JES 155 H432 (2008).
- Reaction Mechanisms
Y. Kuo and S. Lee, ECS
Proc. 99-30, 328, 1999.
Y. Kuo & S. Lee, Jpn. J. Appl. Phys. 39, 2(3A/B), L801, 2000.
Y. Kuo & S. Lee, APL 78(7), 1002, 2001.
- Reliability of Etched Cu
Lines – Electronmigration tests
Isothermal EM test (a) resistance and (b)
temperature vs. time during.
Cumulative failure distribution of flat Cu lines
- Reliability of Flexible
Electronics Application of Etched Cu Lines
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(a) Cu line for EM test. (b) 3-point bending setup. (c) Bent Cu line
sample plate. |
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Void distributions in (a) flat line and (b) bent line of EM at 350°C.
Cumulative failure distribution of bent Cu lines
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